iCalculate’s Studio

iCalculate’s Studio

Pioneering Multi-dimensional Optoelectronic Sensing

Vortex Avalanche
What is AvalancheGranular Materials and CriticalityGranular materials lie somewhere between liquids and solids: while a pile of sand at rest looks solid, when you pour extra sand on it from above, you can either obtain a continuous, liquid-like flow of sand on the surface of the pile, or you can ...
The RTS Waveform Evolution

This report analyzes the random telegraph signal (RTS) waveform response of YBCO nanowire detectors under varying bias currents, using both experimental observation and circuit simulation. The study reveals a bias-dependent resistance switching behavior and discusses its implications for photoresponse dynamics and device latching effects.

MOSFET Quantum Transport Simulation

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) represents one of the most fundamental building blocks of modern electronics. As device dimensions shrink into the nanoscale regime, quantum mechanical effects become increasingly important, fundamentally altering the transport characteristics. This article presents an interactive simulation that bridges classical and quantum transport regimes, incorporating realistic effects such as contact barriers, gate leakage, and quantum noise.

Quantum of Conductance: Deriving and Visualizing the Limits of Electronic Transport

When electrons travel through nanoscale devices, their behavior is governed not by classical Ohm’s law but by quantum mechanics and statistical distributions. This article introduces the physical foundation of the quantum of conductance, derives the Landauer formula step-by-step, and embeds an interactive visualization to show how temperature, energy, and electron distribution interplay in quantum transport.

Phase Transitions in Electronic Materials and Devices

This article explores how first-order and second-order phase transitions manifest in electronic materials and devices. We examine their theoretical foundations and practical implications, with a focus on steep-slope devices such as NC-FETs. Special attention is given to the interplay between ferroelectricity, subthreshold swing, and dynamic stability in 2D and advanced semiconductor systems.

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Du Xinchuan
Wisdom appears in contradiction to itself